Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1487906
Reference29 articles.
1. Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview
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4. Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance
5. Photoreflectance of AlxGa1−xAs and AlxGa1−xAs/GaAs interfaces and high‐electron‐mobility transistors
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1. Single quantum well diodes from GaInAsBi emitting at wavelengths up to 2.5 μm;Infrared Physics & Technology;2020-12
2. Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment;Journal of Applied Physics;2019-05-28
3. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness;Nanoscale Research Letters;2017-03-29
4. Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice;Chinese Physics Letters;2009-07
5. Competition between confinement potential fluctuations and band-gap renormalization effects inIn0.53Ga0.47As/In0.525Ga0.235Al0.25Assingle and double quantum wells;Physical Review B;2008-04-15
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