Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1340001
Reference10 articles.
1. Subpicosecond InP/InGaAs heterostructure bipolar transistors
2. Bipolar transistor with graded band-gap base
3. (GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
4. Photoreflectance study of AlAs/GaAs gradient period superlattice
5. Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures
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1. Bandgap control for the lattice-matched InGaAs/InAlAs/InP single quantum wells;IOP Conference Series: Materials Science and Engineering;2017-01
2. Competition between confinement potential fluctuations and band-gap renormalization effects inIn0.53Ga0.47As/In0.525Ga0.235Al0.25Assingle and double quantum wells;Physical Review B;2008-04-15
3. Modeling photoreflectance of quantum well heterostructures: A comprehensive approach;Journal of Applied Physics;2007-02
4. The effect of potential fluctuations on the optical properties of InGaAs∕InGaAlAs single and coupled double quantum wells;Journal of Applied Physics;2006-09
5. The effect of potential fluctuations on the optical properties of InGaAs∕InAlAs superlattices;Journal of Applied Physics;2005-05-15
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