Doping concentration dependence of radiance and optical modulation bandwidth in carbon‐doped Ga0.51In0.49P/GaAs light‐emitting diodes grown by gas source molecular beam epitaxy-Reference-Cited by-同舟云学术

Doping concentration dependence of radiance and optical modulation bandwidth in carbon‐doped Ga0.51In0.49P/GaAs light‐emitting diodes grown by gas source molecular beam epitaxy

Published:1992-01-20 Issue:3 Volume:60 Page:353-355
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

de Lyon T. J.,Woodall J. M.,McInturff D. T.,Bates R. J. S.,Kash J. A.,Kirchner P. D.,Cardone F.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.106654

Reference12 articles.

1. High‐frequency operation of heavily carbon‐doped Ga0.51In0.49P/GaAs surface‐emitting light‐emitting diodes grown by metalorganic molecular beam epitaxy

2. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source

3. Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP

4. High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs

5. Concentration‐dependent absorption and spontaneous emission of heavily doped GaAs

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