High‐frequency operation of heavily carbon‐doped Ga0.51In0.49P/GaAs surface‐emitting light‐emitting diodes grown by metalorganic molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105444
Reference15 articles.
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