Wideband sub-Poissonian light generation in light-emitting diodes incorporating a heavily-doped active region
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1517725
Reference11 articles.
1. Doping concentration dependence of radiance and optical modulation bandwidth in carbon‐doped Ga0.51In0.49P/GaAs light‐emitting diodes grown by gas source molecular beam epitaxy
2. Tunnel contact junction native-oxide aperture and mirror vertical-cavity surface-emitting lasers and resonant-cavity light-emitting diodes
3. Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes
4. Observation of amplitude squeezing in a constant-current–driven semiconductor laser
5. Generation of Sub-Poissonian Light by High-Efficiency Light-Emitting Diodes
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1. Observation of Shot Noise in Phosphorescent Organic Light-Emitting Diodes;IEEE Transactions on Electron Devices;2014-09
2. Generation of Extremely Weak Sub-Poissonian Light Using High-Efficiency Light-Emitting Diodes;Japanese Journal of Applied Physics;2004-07-30
3. Broadband photon-number squeezing in light-emitting diodes at low photon-flux levels;Applied Physics Letters;2003-08-11
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