Relaxed Si1−xGex/Si1−x−yGexCy buffer structures with low threading dislocation density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119067
Reference13 articles.
1. Effect of dislocations in strained Si/SiGe on electron mobility
2. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
3. Dislocations and strain relief in compositionally graded layers
4. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon
5. Strain relaxation in tensile-strained layers on Si(001)
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