Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors-Reference-Cited by-同舟云学术

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Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Published:2014-04-28 Issue:17 Volume:104 Page:171113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lao Yan-Feng,Wolde Seyoum,Unil Perera A. G.,Zhang Y. H.,Wang T. M.,Kim J. O.,Schuler-Sandy Ted,Tian Zhao-Bing,Krishna S. S.

Funder

NSF

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4875239

Reference15 articles.

1. InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency

2. Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector

3. Quantum Dot Infrared Photodetectors

4. Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors

5. Electrically driven polarized single-photon emission from an InGaN quantum dot in a GaN nanowire

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1. High performance short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) validated with theoretically simulated model;Journal of Alloys and Compounds;2019-10

2. Noise, gain, and capture probability of p-type InAs-GaAs quantum-dot and quantum dot-in-well infrared photodetectors;Journal of Applied Physics;2017-06-28

3. Silicon-Based Nanoheterostructures With Quantum Dots;Advances in Semiconductor Nanostructures;2017

4. Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness;Acta Materialia;2016-01

5. Phonon bottleneck in p-type Ge/Si quantum dots;Applied Physics Letters;2015-11-23

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