Quantum Dot Infrared Photodetectors
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Publisher
Elsevier
Reference162 articles.
1. Energy level structure and electron relaxation times in InAs∕InxGa1−xAs quantum dot-in-a-well structures
2. Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors
3. Enhancing the dot density in quantum dot infrared photodetectors via the incorporation of antimony
4. Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12μm atmospheric window via rapid thermal annealing
5. Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate
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3. Quantum-Dot Single-Electron Transistors as Thermoelectric Quantum Detectors at Terahertz Frequencies;Nano Letters;2021-10-07
4. Modelling and simulation of carrier transport in quantum dot memory device for longer data retention and minimized power consumption;Journal of Computational Electronics;2020-09-16
5. Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region;Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI;2019-03-04
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