Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12μm atmospheric window via rapid thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2794014
Reference28 articles.
1. Normal incidence InAs/AlxGa1−xAs quantum dot infrared photodetectors with undoped active region
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3. Intraband relaxation via polaron decay in InAs self-assembled quantum dots
4. Absorption, carrier lifetime, and gain in inas~gaas quantum-dot infrared photodetectors
5. Dark Current in Quantum Dot Infrared Photodetectors
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1. Quantum Dot Infrared Photodetectors;VLSI Micro- and Nanophotonics;2018-09-03
2. Optically Triggered Infrared Photodetector;Nano Letters;2014-12-12
3. Effects of strain on the optoelectronic properties of annealed InGaAs/GaAs self-assembled quantum dots;Semiconductor Science and Technology;2014-05-16
4. Effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots with different areal density;Optik;2014-02
5. Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer;Thin Solid Films;2014-02
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