Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region-Reference-Cited by-同舟云学术

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Improvement in operating temperature of InAs/GaAs quantum-dots-based photodetectors by varying position of localized carriers in active region

Published:2019-03-04 Issue: Volume: Page:
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Container-title:Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI
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Author:

Deviprasad Vidya,Ghadi Hemant,Das Debabrata,Panda Debiprasad,Chavan Vinayak,Raut Pravin,Aanand Abhijeet,Chakrabarti Subhananda

Publisher

SPIE

Reference14 articles.

1. The theory of quantum-dot infrared phototransistors

2. Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector

3. Advances in Infrared Photodetectors (Semiconductors and Semimetal Series));Barve,2011

4. Wavelength agile superlattice quantum dot infrared photodetector

5. Third-generation infrared photodetector arrays

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