Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4757280
Reference23 articles.
1. Electrical switching dynamics in circular and rectangular Ge2Sb2Te5 nanopillar phase change memory devices
2. Threshold switching and phase transition numerical models for phase change memory simulations
3. Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory
4. SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer
5. SET to RESET Programming in Phase Change Memories
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1. Hybrid CMOS-PCM temperature sensor;AIP Advances;2020-06-01
2. Temperature dependence of SET switching characteristics in phase-change memory cells;Journal of Physics D: Applied Physics;2016-08-23
3. Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain;International Journal of Heat and Mass Transfer;2016-03
4. Continuous controllable amorphization ratio of nanoscale phase change memory cells;Applied Physics Letters;2014-06-02
5. Thermal dispersion and secondary crystallization of phase change memory cells;Applied Physics Letters;2013-12-02
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