Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3012366
Reference20 articles.
1. Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology
2. Threshold switching in chalcogenide‐glass thin films
3. Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials
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