Temperature dependence of SET switching characteristics in phase-change memory cells-Reference-Cited by-同舟云学术

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Temperature dependence of SET switching characteristics in phase-change memory cells

Published:2016-08-23 Issue:38 Volume:49 Page:385101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

He Qiang,Li Zhen,Liu Chang,Meng Xiang-ru,Peng Ju-hong,Lai Zhi-bo,Miao Xiang-shui

Funder

National High-tech R&D Program (863 Program)

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/49/i=38/a=385101/pdf

Reference24 articles.

1. Reversible Electrical Switching Phenomena in Disordered Structures

2. Phase change materials and phase change memory

3. Design Rules for Phase-Change Materials in Data Storage Applications

4. From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials

5. Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization

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