Photoluminescence study of hydrogen passivation in GaAs and AlGaAs by the photochemical vapor deposition system
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103581
Reference7 articles.
1. Hydrogen in crystalline semiconductors
2. Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure
3. Shallow donors andD‐Xcenters neutralization by atomic hydrogen in GaAlAs doped with silicon
4. Si donor neutralization in high‐purity GaAs
5. Photoluminescence study of the shallow donor neutralization in GaAs(Si) by atomic hydrogen
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1. Influence of hydrogenation on surface morphologies, transport, and optical properties of InN epifilms;Journal of Applied Physics;2006-06-15
2. Photoluminescence study of hydrogen passivation in InAs1−xNx/InGaAs single-quantum well on InP;Applied Physics Letters;2002-05-13
3. SURFACE AND INTERFACIAL RECOMBINATION IN SEMICONDUCTORS;Handbook of Surfaces and Interfaces of Materials;2001
4. Persistent photoconductivity in InGaP/GaAs heterostructures;Applied Physics Letters;1999-11-08
5. The optical and electrical studies of hydrogen passivation in GaInP/GaAs heterostructures;Applied Physics Letters;1999-03-08
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