Residual lattice strain in thin silicon-on-insulator bonded wafers: Thermal behavior and formation mechanisms
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371925
Reference13 articles.
1. Velocity overshoot greater than 107 cm/s at room temperature in sub‐0.1‐μm silicon‐on‐insulator devices
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3. Fully-depleted SOI CMOS for analog applications
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5. A 100-V lateral DMOS transistor with a 0.3-micrometer channel in a 1-micrometer silicon-film-on-insulator-on-silicon
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