Velocity overshoot greater than 107 cm/s at room temperature in sub‐0.1‐μm silicon‐on‐insulator devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118089
Reference7 articles.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modelling of Hot-Electron Energy in Short-Channel MOSFETs by Electrical Method;Chinese Physics Letters;2009-02-23
2. The formation of thick buried oxide layers using ion implantation from water plasma;Thin Solid Films;2005-01
3. Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor;Journal of Applied Physics;2003-01-15
4. Nonstationary electron/hole transport in sub-0.1 μm MOS devices: correlation with mobility and low-power CMOS application;IEEE Transactions on Electron Devices;2001
5. A simple modelling of device speed in double-gate SOI MOSFETs;Microelectronics Journal;2000-04
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