A simple modelling of device speed in double-gate SOI MOSFETs-Reference-Cited by-同舟云学术

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A simple modelling of device speed in double-gate SOI MOSFETs

Published:2000-04 Issue:4 Volume:31 Page:255-259
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Rajendran K,Samudra G

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. High Speed Semiconductor Devices;Sze,1990

2. 89GHz fT room temperature silicon MOSFETs;Yan;IEEE Elect. Device Lett.,1992

3. A 0.1μm gate elevated source and drain MOSFET fabricated by phase-shift lighography;Kimura;IEDM Tech. Digest,1991

4. Scaling theory for double gate SOI MOSFETs;Suzuki;IEEE Trans. Elect. Devices,1993

5. Double-gate SOI with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Elect. Device Lett.,1987

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor;IET Circuits, Devices & Systems;2018-06-26

2. Impact of the computational boundary on the coupled thermal and electrical analysis of Si devices;The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena In Electronic Systems (IEEE Cat. No.04CH37543)

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