Electron velocity and negative differential mobility in AlGaAs/GaAs modulation‐doped heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98626
Reference17 articles.
1. GaAs structures with electron mobility of 5×106cm2/V s
2. Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers
3. Transport in modulation‐doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs)
4. Differential negative resistance caused by inter-subband scattering in a 2-dimensional electron gas
5. Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
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