Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs-Reference-Cited by-同舟云学术

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Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs

Published:1983-04-20 Issue:Part 2, No. 4 Volume:22 Page:L213-L215
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inoue Masataka,Inayama Minoru,Hiyamizu Satoshi,Inuishi Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selected Bibliography;Quantum Semiconductor Structures;1991

2. Chapter 2 Characteristics of Two-Dimensional Electron Gas in III-V Compound Heterostructures Grown by MBE;Very High Speed Integrated Circuits: Heterostructure;1990

3. Electron velocity in GaAs: bulk and selectively doped heterostructures;Semiconductor Science and Technology;1989-07-01

4. Electron velocity at high electric fields in AlGaAs/GaAs modulation-doped heterostructures;Solid-State Electronics;1988-03

5. Hot‐electron transport in selectively dopedn‐type AlGaAs/GaAs heterojunctions;Journal of Applied Physics;1988-02

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