Hot‐electron transport in selectively dopedn‐type AlGaAs/GaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340073
Reference21 articles.
1. Two-dimensional electron gas at a semiconductor-semiconductor interface
2. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
3. Transport properties of selectively doped GaAs‐(AlGa)As heterostructures grown by molecular beam epitaxy
4. Mobility of the two-dimensional electron gas at selectively dopedn-typeAlxGa1−xAs/GaAs heterojunctions with controlled electron concentrations
5. Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structures
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