Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions
Author:
Funder
NSF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870073
Reference13 articles.
1. Graphene transistors
2. Single-particle tunneling in doped graphene-insulator-graphene junctions
3. SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor
4. Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
5. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
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