Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5alloys on Si(100) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343223
Reference13 articles.
1. Defects in epitaxial multilayers
2. Defects in epitaxial multilayers
3. Reduction of dislocation densities in heteroepitaxial III−V VPE semiconductors
4. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
5. Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition
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