Analysis of two‐step‐growth conditions for GaN on an AlN buffer layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359368
Reference32 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. Stimulated Emission and Laser Action in Gallium Nitride
3. Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
4. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
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