Abstract
Abstract
Thin film growth of Zn
x
Mn1−x
S on a Si (100) substrate by sputtering was investigated for nonpolar AlN film growth on Si (100) substrate. The Zn
x
Mn1−x
S buffer layer reduces the large differences in thermal expansion coefficient and lattice constants between AlN and Si. Although the solubility of ZnS in MnS is less than 5% at 800 °C in bulk form, the insertion of a room-temperature MnS layer between Zn
x
Mn1−x
S and Si enabled (100)-oriented cubic-Zn
x
Mn1−x
S film growth even at x = 9.5%, which is a metastable phase and a phase separation region in bulk form. On the (100)-oriented cubic Zn
x
Mn1−x
S film, nonpolar AlN growth was achieved by sputtering. Furthermore, X-ray photoelectron spectroscopy measurements revealed that the Zn
x
Mn1−x
S film improved the stability of the AlN/Zn
x
Mn1−x
S interface. Zn
x
Mn1−x
S has the potential to enable nonpolar AlN growth on large-diameter Si (100) substrates.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering