Epitaxial Al Schottky contacts formed on (111) GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102967
Reference16 articles.
1. Thermal aging of Al thin films on GaAs
2. Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
3. Schottky-Barrier Properties of Nearly-Ideal (n≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces
4. Al–GaAs (001) Schottky barrier formation
5. On the dependence of Schottky barrier height and interface states upon initial semiconductor surface parameters in GaAs {001}/Al junctions
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the Richardson constant of intimate metal‐GaAs (111)BSchottky diodes grown by molecular beam epitaxy;Journal of Applied Physics;1993-11-15
2. Single‐crystal Al growth on Si(111) by low‐temperature molecular beam epitaxy;Applied Physics Letters;1993-04-12
3. Strain fields due to differential dilatation at metal/semiconductor contacts and resulting piezoelectrical fields in GaAs;Solid-State Electronics;1993-02
4. Epitaxial growth of an Al/CaF2/Al/Si(111) structure;Applied Physics Letters;1992-07-20
5. The Study on the Pt Barrier Effect in Al/Pt/Ti/n-GaAs;MRS Proceedings;1992
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