Epitaxial growth of an Al/CaF2/Al/Si(111) structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107966
Reference11 articles.
1. Growth and characterization of single crystal insulators on silicon
2. Metallization by ionized cluster beam deposition
3. Epitaxial growth of Al on Si by thermal evaporation in ultra-high vacuum: growth on Si(100)2 × 1 single and double domain surfaces at room temperature
4. Low Temperature Epitaxial Growth of Al on Si( 111) and CaF2(111) Using Molecular Beam Epitaxy
5. Single‐crystal‐aluminum Schottky‐barrier diodes prepared by molecular‐beam epitaxy (MBE) on GaAs
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1. Biaxially Textured Al Film Growth on CaF2 Nanostructures toward a Method of Preparing Single-Crystalline Si Film on Glass Substrates;ACS Nano;2010-09-14
2. Growth and structure of epitaxial Al and Cu films on CaF2;Thin Solid Films;2003-10
3. Ultra-thin epitaxial Al and Cu films on CaF2/Si(1 1 1);Applied Surface Science;2001-05
4. Epitaxial Al and Cu films grown on CaF2/Si(111);MRS Proceedings;2000
5. Epitaxial Growth of $\bf CaF_{2}/Si/CaF_{2}$ on Si(111);Japanese Journal of Applied Physics;1994-04-01
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