Reflectance difference spectroscopy of mixed phases of indium phosphide (001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337620
Reference26 articles.
1. Above-bandgap optical anisotropies in the reflectance spectra of some cubic semiconductors
2. In situ monitoring of crystal growth by reflectance difference spectroscopy
3. Reflectance anisotropy spectroscopy and reflection high-energy electron diffraction of submonolayer coverages of Si grown on GaAs(001) by molecular-beam epitaxy
4. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere
5. Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)
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1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. GaP(100) and InP(100) Surfaces;GaP Heteroepitaxy on Si(100);2013
3. GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient;Journal of Crystal Growth;2011-03
4. In situreflection anisotropy spectroscopy analysis of heteroepitaxial GaP films grown on Si(100);Journal of Applied Physics;2010-06-15
5. Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (001)-(2×4) surface;Surface Science;2006-11
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