Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)-Reference-Cited by-同舟云学术

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Surface processes responsible for reflectance-anisotropy oscillations during molecular beam epitaxy growth of GaAs(001)

Published:1995-08 Issue:1-2 Volume:337 Page:103-108
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Rumberg J.,Zettler J.-T.,Stahrenberg K.,Ploska K.,Richter W.,Däweritz L.,Schützendübe P.,Wassermeier M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference26 articles.

1. Surface stoichiometry and structure of GaAs

2. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique

3. Kinetic studies of the growth of III–V compounds using modulated molecular beam techniques

4. MBE growth of GaAs and III-V alloys

5. Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs/AlGaAs MQWs grown by MBE: Optimizing GaAs insertion layer thickness to enhance interface quality and luminescent property;Materials Science in Semiconductor Processing;2024-09

2. In Situ and Real-Time Monitoring of Doping Levels by Reflectance Anisotropy Spectroscopy (RAS) during Molecular Beam Epitaxial (MBE) Growth of III/V Semiconductors;Advances in Materials Science and Engineering;2023-12-13

3. On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy;Applied Surface Science;2018-05

4. Atomic layer sensitive in-situ plasma etch depth control with reflectance anisotropy spectroscopy (RAS);Optical Measurement Systems for Industrial Inspection X;2017-06-26

5. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment;Beilstein Journal of Nanotechnology;2016-11-21

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