Local strain measurements in shallow trench insulator structures using near-ultraviolet Raman spectroscopy: Simulation and experiment-Reference-Cited by-同舟云学术

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Local strain measurements in shallow trench insulator structures using near-ultraviolet Raman spectroscopy: Simulation and experiment

Published:2007-11-15 Issue:10 Volume:102 Page:103506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Latu-Romain Eddy,Mermoux Michel,Crisci Alexandre,Delille Dominique,Kwakman Laurens F. Tz.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2811947

Reference32 articles.

1. A scaling consideration on mechanical stress-induced hot-carrier effects

2. International Electron Devices Meeting;Bianchi R.,2002

3. VLSI Technology, Systems, and Applications, 2003 International Symposium;Sheu Y.,2003

4. International Electron Devices Meeting;Boeuf F.,2004

5. International Electron Devices Meeting;Scott G.,1999

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2. Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy;Journal of Electronic Materials;2018-05-03

3. Apparent Raman spectral shifts from nano-structured surfaces;Applied Physics Letters;2012-04-23

4. Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging;Journal of Applied Physics;2010-01

5. Local stress determination in shallow trench insulator structures with one-side and two-sides pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization;Journal of Applied Physics;2009-05

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