Local stress determination in shallow trench insulator structures with one-side and two-sides pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization-Reference-Cited by-同舟云学术

Local stress determination in shallow trench insulator structures with one-side and two-sides pad-SiN layer by polarized micro-Raman spectroscopy extraction and mechanical modelization

Published:2009-05 Issue:9 Volume:105 Page:093511
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liao Milton M. H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3116531

Reference12 articles.

1. Gate width dependence on backscattering characteristics in the nanoscale strained complementary metal-oxide-semiconductor field-effect transistor

2. Superior n-MOSFET Performance by Optimal Stress Design

3. Optimal Stress Design in p-MOSFET With Superior Performance

4. Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond

5. Proceedings of the IRPS;Shih J. R.,2004

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