Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond-Reference-Cited by-同舟云学术

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Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond

Published:2005-04-21 Issue:4B Volume:44 Page:2152-2156
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Ishibashi Masato,Horita Katsuyuki,Sawada Mahito,Kitazawa Masashi,Igarashi Motoshige,Kuroi Takashi,Eimori Takahisa,Kobayashi Kiyoteru,Inuishi Masahide,Ohji Yuzuru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current;Japanese Journal of Applied Physics;2016-12-16

2. Micro-Raman spectroscopic analysis of single crystal silicon microstructures for surface stress mapping;Japanese Journal of Applied Physics;2015-09-09

3. Study of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method;Journal of Applied Physics;2012-08-15

4. Mobility Enhancement Technology for Scaling of CMOS Devices: Overview and Status;Journal of Electronic Materials;2011-05-15

5. Enhancement of CMOSFETs Performance by Utilizing SACVD-Based Shallow Trench Isolation for the 40-nm Node and Beyond;IEEE Transactions on Nanotechnology;2011-05

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