Control of verticality and (111) orientation of In-catalyzed silicon nanowires grown in the vapour–liquid–solid mode for nanoscale device applications
Author:
Affiliation:
1. FUTURE-PV
2. Japan Science and Technology Agency
3. Fukushima 963-0215
4. Japan
5. Graduate School of Materials Science
6. Nara Institute of Science and Technology
7. Ikoma
8. Department of Physical Electronics
Abstract
Decreasing the contact angle between In NDs and the Si substrate helps to grow vertically aligned Si NWs with a diameter of 18 nm.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01338K
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1. Numerical Approach to the Investigation of Performance of Silicon Nanowire Solar Cells Embedded in a SiO2Matrix
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