The understanding on the evolution of stress-induced gate leakage in high-k dielectric metal-oxide-field-effect transistor by random-telegraph-noise measurement
Author:
Affiliation:
1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, 300 Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4938142
Reference20 articles.
1. 45nm High-k + metal gate strain-enhanced transistors
2. Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films
3. Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with Dy2O3 gate dielectric
4. Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles
5. Electrical stress-induced charge carrier generation/trapping related degradation of HfAlO/SiO2 and HfO2/SiO2 gate dielectric stacks
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