SiO diffusion during thermal decomposition of SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345185
Reference12 articles.
1. Vacancy supersaturation in Si under SiO2caused by SiO formation during annealing in Ar
2. High‐temperature stability of Si/SiO2interfaces and the influence of SiO flux on thermomigration of impurities in SiO2
3. Defect Microchemistry at the SiO2/Si Interface
4. Oberflächenpräparation für die Si-Molekularstrahlepitaxie (MBE)
5. B-contamination of Si-surfaces
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