The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask-Reference-Cited by-同舟云学术

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The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask

Published:2023-12 Issue: Volume:168 Page:107857
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Stȩpniak Michał^ORCID,Wośko Mateusz,Paszkiewicz Regina

Funder

Narodowe Centrum Nauki

Narodowe Centrum Badań i Rozwoju

Politechnika Wrocławska

European Regional Development Fund

Narodowa Agencja Wymiany Akademickiej

European Commission

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Parasitic masking effect in GaN SA–MOVPE using SiO2 masks deposited by the PECVD technique;Stȩpniak;Mater. Sci. Semicond. Process.,2023

2. GaN micropillar schottky diodes with high breakdown voltage fabricated by selective–area growth;Debald;Phys. Status Solidi (A),2020

3. SIMS study of rapid thermal nitridation of silicon dioxide thick films in ammonia ambient;Bréelle;Appl. Surf. Sci.,1994

4. Atomic transport during growth of ultrathin dielectrics on silicon;Baumvol;Surf. Sci. Rep.,1999

5. Thermal nitridation of SiO2 films in ammonia: Isotopic tracing of nitrogen and oxygen in further stages and in reoxidation;Baumvol;J. Electrochem. Soc.,1996

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