Parasitic masking effect in GaN SA-MOVPE using SiO2 masks deposited by the PECVD technique
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recent development of electrochemically exfoliated graphene and its hybrid conductive inks for printed electronics applications;Synthetic Metals;2024-11
2. The influence of GaN growth temperature on parasitic masking in SA-MOVPE using PECVD SiO2 mask;Materials Science in Semiconductor Processing;2023-12
3. Characterization of the parasitic masking layer formed during GaN SA-MOVPE using PECVD SiO2 masks;Applied Surface Science;2023-12
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