Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N∕GaN heterojunction field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1784038
Reference16 articles.
1. GaN: Processing, defects, and devices
2. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
3. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
4. Polymer PBT/n-GaN metal–insulator–semiconductor structure
5. GaN Growth Using GaN Buffer Layer
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