Author:
di Forte Poisson M.-A.,Sarazin N.,Magis M.,Tordjman M.,Morvan E.,Aubry R.,di Persio J.,Grimbert B.
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer
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3. M.-A. di Forte-Poisson, M. Magis, N. Sarazin, M. Tordjman, J. Di Persio, in: Proceedings of E-MRS Fall Meeting, Warsaw, 2005.
4. Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors
5. Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al0.25Ga0.75N∕GaN heterojunction field-effect transistors
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