Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness-Reference-Cited by-同舟云学术

Strain-facilitated process for the lift-off of a Si layer of less than 20 nm thickness

Published:2005-12-19 Issue:25 Volume:87 Page:251907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shao Lin,Lin Yuan,Swadener J. G.,Lee J. K.,Jia Q. X.,Wang Y. Q.,Nastasi M.,Thompson Phillip E.,Theodore N. David,Alford T. L.,Mayer J. W.,Chen Peng,Lau S. S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2146211

Reference16 articles.

1. Silicon-on-Insulator Technology

2. Application of hydrogen ion beams to Silicon On Insulator material technology

3. Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon

4. Investigation of plasma hydrogenation and trapping mechanism for layer transfer

5. Layer-transfer process for silicon-on-insulator with improved manufacturability

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