Low temperature aluminum nitride thin films for sensory applications
Author:
Affiliation:
1. Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel, Germany
2. Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4959895
Reference35 articles.
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4. Frequency effects on the dielectric properties of AlN film deposited by radio frequency reactive magnetron sputtering
5. R. Lanz, C. Lambert, L. Senn, L. Gabathuler, and G. J. Reynolds, in 2006 IEEE Ultrasonics Symposium, pp. 1481–1485.
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