Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1359162
Reference21 articles.
1. Zero-Temperature-Coefficient SAW Devices on AlN Epitaxial Films
2. Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy
3. Epitaxial AlN Thin Films Grown onα-Al2O3Substrates by ECR Dual Ion Beam Sputtering
4. High quality epitaxial aluminum nitride layers on sapphire by pulsed laser deposition
5. Preparation ofc-Axis Oriented AlN Thin Films by Low-Temperature Reactive Sputtering
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