Silicon autocompensation in GaAs grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336780
Reference15 articles.
1. High quality Si-doped GaAs layers grown by molecular beam epitaxy
2. Effect of accelerated growth rate (1–5 μm/h) on molecular beam epitaxial GaAs using Si as a dopant
3. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
4. The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam Epitaxy
5. Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
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1. Low-Energy Focused Ion Beam Doping during Molecular Beam Epitaxial Growth for the Fabrication of Three-Dimensional Devices: The Effect of Dopant Surface Segregation;Japanese Journal of Applied Physics;1995-08-30
2. Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth;Journal of Applied Physics;1993-10
3. Influence of the impurity concentration on charge carrier dynamics in GaAs films;Applied Physics Letters;1990-04-16
4. Molecular Beam Epitaxy of Artificially Layered Semiconductor Structures — Basic Concept and Recent Achievements;Physics, Fabrication, and Applications of Multilayered Structures;1988
5. Molecular Beam Epitaxy of Artificially Layered III-V Semiconductors on an Atomic Scale;Physics and Applications of Quantum Wells and Superlattices;1987
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