Effect of ion energy on Sn donor activation and defect production in molecular beam epitaxy GaAs doped with Sn ions during growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354405
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1. Identification of fragment ions produced by the decomposition of tetramethyltin and the production of low-energy Sn+ ion beam;PLOS ONE;2021-06-25
2. Focused Ion Beam Micro- and Nanoengineering;MRS Bulletin;2007-05
3. Low energy focused ion beam system design;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-07
4. Application of a focused ion beam system to micro and nanoengineering;Materials Science and Technology;2002-07
5. Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system;Applied Surface Science;2000-06
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