Homogeneous (Ga,Al)P alloy grown by the temperature difference method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.330414
Reference16 articles.
1. Electroluminescence in AlxGa1−xP Diodes Prepared by Liquid‐Phase Epitaxy
2. (GaAl)P optical‐waveguide modulators fabricated by liquid‐phase epitaxy
3. Liquid phase epitaxy of AlxGa1−xP on GaP and its application to double heterostructure light modulators
4. A highly stable long‐life GaP‐GaAlP heterojunction cold cathode
5. Phase diagram of the system Al-Ga-P
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescences from AlxGa1−xP liquid phase epitaxial layers;Journal of Electronic Materials;1999-10
2. OMVPE growth of GaP and AlGaP using tertiarybutylphosphine as the phosphorus source;Journal of Crystal Growth;1991-03
3. Heteroepitaxy of GaP-AlxGa1−xP system by the Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP);Journal of Crystal Growth;1990-01
4. Heterostructure semiconductor Raman laser;IEE Proceedings J Optoelectronics;1987
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