Heterostructure semiconductor Raman laser
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-j.1987.0038?crawler=true&mimetype=application/pdf
Reference26 articles.
1. Watanabe, Y., and Nishizawa, J.: ‘Semiconductor maser’, (273217)and 762975, 1960
2. Nishizawa, J., and Suto, K.: ‘Signal conversion, amplification and oscillation device’, (8444479)
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Semiconductor Raman laser pumped with a fundamental mode;IEE Proceedings J Optoelectronics;1992
2. Semiconductor Raman laser with resonator film transparent to pump light;IEE Proceedings J Optoelectronics;1991
3. Heteroepitaxy of GaP-AlxGa1−xP system by the Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP);Journal of Crystal Growth;1990-01
4. Semiconductor Raman laser as a tool for wideband optical communications;IEE Proceedings J Optoelectronics;1990
5. Buried‐heterostructure semiconductor Raman laser with threshold pump power less than 1 W;Journal of Applied Physics;1989-12
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