Liquid phase epitaxy of AlxGa1−xP on GaP and its application to double heterostructure light modulators
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. On the Preparation of the Phosphides of Aluminum, Gallium and Indium
2. Optical absorption in n-type gallium phosphide
3. Determination of band gap and refractive index of AIP from optical absorption
4. Liquid-phase epitaxial growth of multiple (AlGa) P-GaP hetero-junction structures
5. Reduction in dislocation density in In‐doped GaP LPE layers grown from indium solvent
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Photoluminescences from AlxGa1−xP liquid phase epitaxial layers;Journal of Electronic Materials;1999-10
2. Homogeneous (Ga,Al)P alloy grown by the temperature difference method;Journal of Applied Physics;1982-12
3. Low temperature phase diagram of Ga-Al-P ternary system;Journal of Crystal Growth;1982-11
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