Reduction in dislocation density in In‐doped GaP LPE layers grown from indium solvent
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323502
Reference9 articles.
1. Correspondence between Nonradiative Dark Spots, Microplasma Emissions, and Dislocation Pits in GaP : N Light‐Emitting Diodes
2. Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy
3. Effect of Heat Treatment with Excess Arsenic Pressure on Photoluminescence of p‐Type GaAs
4. Properties of Sn‐doped GaAs
5. Etching Studies of Impurity Precipitates in Pulled GaP Crystals
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Minority carrier diffusion length in LPE InxGa1−xP: N layers (x < 0.01);Solid-State Electronics;1982-10
2. A novel technique for investigation of luminescence properties of Ga1-xInxP LPE layers with a small In content;Journal of Physics D: Applied Physics;1981-02-14
3. Photoemission study of negative‐electron‐affinity GaP;Journal of Applied Physics;1979-06
4. GaP negative‐electron‐affinity cold cathodes;Journal of Applied Physics;1979-05
5. Low temperature growth of GaP LPE layers from indium solvent;Journal of Crystal Growth;1979-05
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