Effect of Heat Treatment with Excess Arsenic Pressure on Photoluminescence of p‐Type GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1656410
Reference15 articles.
1. Effect of Heat Treatment on Photoluminescence of Zn‐Doped GaAs
2. Photoluminescence and solution growth of gallium arsenide
3. Luminescence of zinc doped solution grown gallium arsenide
4. The effect of arsenic pressure on crystal efficiency for injection luminescence in gallium arsenide
5. Hall Effect and Resistivity of Zn‐Doped GaAs
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1. Photoluminescence of molecular beam epitaxially grown Ge‐doped GaAs;Journal of Applied Physics;1983-05
2. Reduction in dislocation density in In‐doped GaP LPE layers grown from indium solvent;Journal of Applied Physics;1977-11
3. Effect of heat treatment on photoluminescence of undoped liquid epitaxial layers GaXIn1-XP;Kristall und Technik;1977
4. Effect of gas‐phase stoichiometry on the minority‐carrier diffusion length in vapor‐grown GaAs;Applied Physics Letters;1976-08
5. Comparison of Zn‐doped GaAs layers prepared by liquid‐phase and vapor‐phase techniques, including diffusion lengths and photoluminescence;Journal of Applied Physics;1975-08
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