Effect of gas‐phase stoichiometry on the minority‐carrier diffusion length in vapor‐grown GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89027
Reference11 articles.
1. Comparison of Zn‐doped GaAs layers prepared by liquid‐phase and vapor‐phase techniques, including diffusion lengths and photoluminescence
2. Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions
3. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine
4. Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy
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