A novel technique for investigation of luminescence properties of Ga1-xInxP LPE layers with a small In content
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/14/i=2/a=005/pdf
Reference10 articles.
1. Diffuse X-Ray scattering and compositional disorder in GaxIn1–xP
2. Deep hole traps in n‐type liquid encapsulated Czochralski GaP
3. Electroluminescence in GaAsxP1−x, InxGa1−xP, and AlxGa1−xP Junctions with x≲0.01
4. The “D.L.P.” Model in Ga x In1 − x P : N Alloys Correlation with Electronic Properties
5. Luminescence and direct experimental observations of band‐structure effects in nitrogen‐doped GaxIn1−xP alloys
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